Terahertz Technology for Defense and Security-Related Applications

This thesis deals with chosen aspects of terahertz (THz) technology that have potential in defense and security-related applications. A novel method for simultaneous data acquisition in time-resolved THz spectroscopy experiments is developed. This technique is demonstrated by extracting the sheet conductivity of photoexcited charge carriers in semi-insulating gallium arsenide. Comparison with results obtained using a standard data acquisition scheme shows that the new method minimizes errors originating from fluctuations in the laser system out-put and timing errors in the THz pulse detection. Furthermore, a new organic material, BNA, is proved to be a strong and broadband THz emitter which enables spectroscopy with a bandwidth twice as large as conventional spectroscopy in the field. To access electric fields allowing exploration of THz nonlinear phenomena, field enhancement properties of tapered parallel plate waveguide

Impact ionization dynamics in silicon by MV/cm THz fields

We investigate the dynamics of the impact ionization (IMI) process in silicon in extremely high fields in the MV/cm range and at low initial carrier concentrations; conditions that are not accessible with conventional transport measurements. We use ultrafast measurements with high-intensity terahertz pulses to show that IMI is significantly more efficient at lower than at higher initial carrier densities. Specifically, in the case of silicon with an intrinsic carrier concentration (~1010 cm−3), the carrier multiplication process can generate more than 108 electrons from just a single free electron. The photoexcited carrier density dependence of the IMI rate shows that with decreasing initial carrier density the rate increases and approaches the fundamental Okuto limit imposed by energy conservation